Method of cutting interconnection pattern with laser and apparatus thereof
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United States of America Patent
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May 4, 1993
Issued Date -
N/A
app pub date -
May 9, 1991
filing date -
May 18, 1990
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
In an interconnection film cutting method and apparatus therefor according to the present invention, a laser beam having a pulse width of 10.sup.-9 second or less is illuminated on a desired portion of the interconnection pattern of a semiconductor device, such as a link used for redundant operation of a defective bit in, for example, a LSI memory, or on a desired portion of the interconnection pattern of a large-scaled interconnection substrate through a transmission type liquid crystal mask in the form of a desired pattern so as to cut the interconnection pattern without damaging a layer disposed below the interconnection pattern.
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