Method for forming patterned films on a substrate
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United States of America Patent
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-
May 11, 1993
Grant Date -
N/A
app pub date -
Jun 6, 1991
filing date -
Jun 6, 1991
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A method of forming patterned film onto a substrate includes the steps of: depositing a polyether sulfone release layer 50; depositing a photoresist underlayer 52; patterning a predetermined film pattern through the underlayer 52 and the polyether sulfone layer 50; depositing a film layer 60 onto the wafer, thereby forming a patterned film 62 on the substrate 10; weakening the mechanical bonding strength to the polyether sulfone release layer 50 by immersing it in NMP; stripping off layers 54 and 60 by applying an adhesive backed tape 64 to the top of the film layer and applying a pulling force; and, removing the polyether sulfone release layer 50 by immersing the wafer in a NMP bath.
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