Semiconductor structure for photodetector
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United States of America Patent
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May 25, 1993
Grant Date -
N/A
app pub date -
Nov 5, 1991
filing date -
Nov 13, 1990
priority date (Note) -
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Abstract
A photodiode comprises e.g. an n-type semiconductor layer, a p-type semiconductor region selectively formed in a central part from a surface of the n-type semiconductor layer, a dish-like shaped pn-junction therebetween, an annular electrode formed on the p-type region, an electrode formed on the other side of the n-type semiconductor layer, and a dielectric layer deposited on the n-type semiconductor layer for preventing light from attaining to the semiconductor layer by reflecting a dielectric multilayer consisting of two different media having effective thicknesses equal to one fourth of the wavelength of the light.
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