Process to obtain semi-insulating single crystalline epitaxial layers of arsenides and phosphides of metals of the group III of the periodic table useful to make electronic devices
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United States of America Patent
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Jun 1, 1993
Grant Date -
N/A
app pub date -
Aug 15, 1990
filing date -
Aug 15, 1990
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Expired
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Abstract
The present invention is related to a process to obtain semi-insulating single crystalline epitaxial layers of arsenides and phosphides of metals from group III of the periodic table, mainly Gallium Arsenide (GaAs) and Indium Phosphide (InP) useful for making electronic devices. The semi-insulating layers can be grown through the use of any vapor phase epitaxial growth technique, even if residual impurities are present in the material normally grown with any of these techniques. The semi-insulating nature is achieved without intentionally adding compensating impurities. The process is characterized by its control of the electric conductivity of the single crystalline epitaxial layer of such semiconducting compounds through the growth rate and the temperature of the crystal during the growth. The semi-insulating layers are useful to make field effect transistors, integrated circuits, diodes and other electronic devices.
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