SiC thin-film thermistor

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United States of America Patent

PATENT NO 5216404
SERIAL NO

07734691

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Abstract

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A thin-film thermistor element which has an electrically insulating substrate having first and second surfaces opposite to each other and also having a pair of through-holes defined therein so as to extend completely across the thickness thereof, and a pair of electrode films each including a body portion of large surface area and a generally comb-shaped portion continued outwardly from the body portion. The electrode films are formed by the use of a firing process on the first surface of the substrate with the respective comb-shaped portions thereof confronting with each other. First and second electroconductive films are also formed on respective surrounding wall faces defining the corresponding through-holes in the substrate in electrically connected relationship with the body portions of the associated electrode films. A temperature sensitive resistance film is formed by the use of a high frequency sputtering process on the first surface of the substrate so as to overlay the electrode films. A method of making the thermistor element is also disclosed.

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Patent Owner(s)

Patent OwnerAddress
MATSUSHITA ELECTRIC INDUSTRIAL CO LTDJAPAN

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Itou, Shuji Nara, JP 6 113
Nagai, Takeshi Nara, JP 220 3283
Tsuruda, Kunihiro Kashihara, JP 5 84

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