Method of forming substrate contact trenches and isolation trenches using anodization for isolation
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United States of America Patent
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Jun 8, 1993
Grant Date -
N/A
app pub date -
Jun 18, 1992
filing date -
Jun 18, 1992
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A method of fabricating a semiconductor structure includes providing a substrate having at least one layer formed thereon. At least two trenches are formed through the layer and into the substrate wherein at least one trench is for isolation and at least one trench is for making contact to the substrate. After a trench liner is formed on the sidewalls of the trenches, the trenches are filled with doped semiconductor material. The doped semiconductor material in the trench for isolation is then anodized. After the anodization, the anodized trench fill material is oxidized.
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