Method for forming contact portion of semiconductor device
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United States of America Patent
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Jun 15, 1993
Grant Date -
N/A
app pub date -
Mar 23, 1992
filing date -
Apr 19, 1991
priority date (Note) -
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Abstract
A method for forming a contact portion which comprises holing a contact hole in a dielectric layer formed on a silicon substrate, protecting at least exposed portion of the silicon substrate at the bottom of the contact hole with TiW film and then depositing tungsten in the contact hole by CVD method.
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