Process for preparing high-Tc superconducting integrated circuits
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United States of America Patent
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Jun 15, 1993
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app pub date -
Jul 15, 1991
filing date -
Apr 27, 1990
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Abstract
A process for preparing high-Tc superconducting integrated circuits by using a method in which a thin surface layer of non-superconducting tetragonal YBa.sub.2 Cu.sub.3 Oy wafer is selectively transformed into a superconducting orthorhombic phase by oxygen-diffusion. The superconducting orthorhombic islands are surrounded with non-superconducting tetragonal phases and these are electrically isolated from each other. The process results in the formation of superconducting integrated circuits which are inexpensive and are high in quality.
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