Method of making a microaccelerometer having low stress bonds and means for preventing excessive z-axis deflection
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United States of America Patent
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Jun 22, 1993
Grant Date -
N/A
app pub date -
Dec 11, 1990
filing date -
Dec 11, 1990
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A microaccelerometer is provided which has a silicon substrate bonded to a silicon capping plate and silicon back plate, wherein the bonds between the three silicon wafers are characterized by a relatively low residual stress level over a wide temperature range. The bonds are formed by means of an appropriate adhesive at a relatively low temperature without degradation to the microaccelerometer. The bonds between the silicon wafers also provide stress relief during use and packaging of the microaccelerometer. With this invention, the damping distance for the proof mass of the microaccelerometer is accurately controllable and stop means are provided for preventing excessive deflection of the proof mass in a direction perpendicular to the plane of the microaccelerometer.
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