Vapor-phase epitaxial growth process by a hydrogen pretreatment step followed by decomposition of disilane to form monocrystalline Si film
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United States of America Patent
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Jun 22, 1993
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N/A
app pub date -
Sep 26, 1990
filing date -
Sep 26, 1989
priority date (Note) -
Expired
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Abstract
The present invention provides a process for the vapor-phase epitaxial growth of a Si single crystal film on a Si single crystal substrate using diluted disilane, in which the process is carried out at a linear speed of diluted disilane on the surface of the Si single crystal substrate is in the range of 5 to 100 cm/min. and, as desired, the substrate is subjected to the heat pretreatment in a hydrogen stream at a temperature of 1,000.degree. C. or higher for a period of 30 minutes or longer before the epitaxial growth.
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