Process of introduction and diffusion of platinum ions in a slice of silicon
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United States of America Patent
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Jul 13, 1993
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N/A
app pub date -
Nov 19, 1991
filing date -
Nov 29, 1990
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Abstract
A process is provided for introduction and diffusion of platinum ions in a slice of silicon material. The slice of silicon is subjected to a succession of thermal steps at high temperature for the formation of at least one semiconductor device. Later processing steps include the opening of contacts and surface metallization. Platinum ions are introduced by ionic implant prior to the metallization step.
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