Semiconductor memory device having a ferroelectric substance as a memory element
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United States of America Patent
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-
Jul 13, 1993
Grant Date -
N/A
app pub date -
Jan 23, 1991
filing date -
Jan 24, 1990
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
An insulating layer is formed on a transistor having a source region/drain region and a gate electrode. Contact holes are formed in this insulating layer in association with the source region/drain region and the gate electrode. A memory element having a ferroelectric substance layer is provided in that contact hole which is associated with the source region/drain region. This memory element comprises a first electrode provided on the source region/drain region, a ferroelectric substance layer provided on the first electrode, and a second electrode provided on the ferroelectric substance layer. Providing this memory element in the contact hole which is associated with the source region/drain region can make cells flatter and permit metal wires to be surely formed in the contact holes.
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