Silicon carbide member
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United States of America Patent
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Jul 20, 1993
Grant Date -
N/A
app pub date -
Nov 5, 1990
filing date -
Nov 10, 1989
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A silicon carbide member is manufactured by depositing a silicon carbide coating on a substrate of silicon carbide containing free silicon by chemical vapor deposition. By gradually reducing the content of free silicon of the coating such that the coating is made of silicon carbide containing free silicon at the interface with the substrate, but of silicon carbide containing no free silicon at the outer surface, the coating is firmly bonded to the substrate, undergoes little thermal stress and is resistant against cracking and separation upon thermal cycling. The member is suitable for use in the heat treatment of semiconductor elements.
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