Light-emitting diode with a thick transparent layer
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United States of America Patent
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Aug 3, 1993
Grant Date -
N/A
app pub date -
Jan 10, 1992
filing date -
Jan 10, 1992
priority date (Note) -
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Abstract
A light emitting diode (LED) including a light generation region situated on a light-absorbing substrate also includes a thick transparent layer which ensures that an increased amount of light is emitted from the sides of the LED and only a minimum amount of light is absorbed by the substrate. The thickness of the transparent layer is determined as a function of its width and the critical angle at which light is internally reflected within the transparent layer. The thick transparent layer is located either above, below or both above and below the light generation region. The thick transparent layer may be made of materials and with fabrication processes different from the light generation region.
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