Non-interlaced interline transfer CCD image sensing device with simplified electrode structure for each pixel
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United States of America Patent
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Aug 10, 1993
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app pub date -
Apr 14, 1992
filing date -
Nov 29, 1989
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Abstract
An interline transfer type area image sensor which operates in a non-interlaced mode and has an array of columns and rows of photoreceptor in which charge from each pixel is transferred into a stage of a vertical two-phase CCD shift register formed by adjacent electrodes of the CCD. Each electrode of a stage has a separate voltage clock. An ion implanted vertical transfer barrier region is formed under an edge of each electrode.
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