MIM devices, their method of fabrication and display devices incorporating such devices
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United States of America Patent
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Aug 17, 1993
Grant Date -
N/A
app pub date -
Apr 2, 1990
filing date -
Apr 28, 1989
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A MIM device is fabricated by depositing sequentially on a substrate (14) a first conductive layer (30), a thin layer of insulative material (32) of for example silicon oxynitride or silicon nitride. The first conductive layer is formed of anodisable material, e.g. tantalum, and following deposition of the insulative layer the structure is subjected to an anodisation process whereby anodic material (41,35), is grown at any pin holes (40) or weak regions in the insulative layer so as to repair such defects. A second conductive layer (34) is then formed. An array of MIM devices formed in this manner can be used in an active matrix addressed LCD panel.
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