Carbonaceous protective films and method of depositing the same

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 5238705
SERIAL NO

07380328

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

Diamond films are formed by chemical vapor reation. Nitrogen or halogen compound gas is inputted to the reaction chamber together with a reactive gas of hydrocarbon. The resistivity, transparency and hardness of the deposited films can be controlled by adjusting the introduction rate of the halogen or nitrogen.

Loading the Abstract Image... loading....

First Claim

See full text

Family

Loading Family data... loading....

Patent Owner(s)

Patent OwnerAddress
SEMICONDUCTOR ENERGY LABORATORY CO LTD 398 HASE ATSUGI-SHI KANAGAWA-KEN 243 JAPAN A CORP OF JAPANNot Provided

International Classification(s)

  • [Classification Symbol]
  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hamatani, Toshiji Atsugi, JP 132 5391
Hayashi, Shigenori Atsugi, JP 85 3991
Yamazaki, Shunpei Tokyo, JP 7534 239327

Cited Art Landscape

Load Citation

Patent Citation Ranking

Forward Cite Landscape

Load Citation