Process for fabricating a MMIC hybrid device and a transceiver fabricated thereby
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United States of America Patent
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Aug 24, 1993
Grant Date -
N/A
app pub date -
Oct 8, 1991
filing date -
Oct 8, 1991
priority date (Note) -
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Abstract
The substrate for implementation of MMIC devices comprises alumina with feedthrough holes drilled therein to provide conduct ion paths from the top surface of the substrate to the bottom surface. A high-temperature to low-temperature fabrication process is used to form circuit traces and components upon the substrate. Each of the thick film deposition processes is followed by a firing process to remove organic materials from the deposited material and to secure the material to the substrate or previous layer. A Ku-band transceiver constructed using the process includes the attachment of six discrete, unpackaged MMIC's and one HEMT. All other devices and traces are patterned on the substrate and the discrete components are directly attached to pads on the substrate.
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