Chemical mechanical planarization (CMP) of a semiconductor wafer using acoustical waves for in-situ end point detection
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United States of America Patent
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Aug 31, 1993
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N/A
app pub date -
Dec 11, 1991
filing date -
Dec 11, 1991
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Abstract
A method and apparatus for chemically mechanically planarizing (CMP) a semiconductor wafer includes directing acoustic waves at the wafer and receiving reflected acoustic waves from the wafer during the (CMP) process. By analyzing the acoustic waves and reflected acoustic waves a thickness of the wafer can be determined and an endpoint and thickness of films formed on the wafer can be monitored in real time during the (CMP) process. The process parameters of the (CMP) process can then be adjusted as required to improve the uniformity of the process.
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