Chemical vapor deposition technique for depositing titanium silicide on semiconductor wafers
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United States of America Patent
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Aug 31, 1993
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N/A
app pub date -
Aug 7, 1992
filing date -
Aug 7, 1992
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Abstract
Disclosed is a chemical vapor deposition (CVD) method of providing a conformal layer of titanium silicide atop a semiconductor wafer within a chemical vapor deposition reactor. Such includes, a) positioning a wafer within the CVD reactor; b) injecting selected quantities of gaseous TiCl.sub.4, a gaseous compound of the formula Si.sub.n H.sub.2n+2 where 'n' is an integer greater than or equal to 2, and a carrier gas to within the reactor; and c) maintaining the reactor at a selected pressure and a selected temperature which are effective for reacting the TiCl.sub.4 and Si.sub.n H.sub.2n+2 to deposit a film on the wafer, the film comprising a titanium silicide.
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