Importance

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Abstract

A dual mode plasma etching system and method for plasma etching endpoint detection etches a designated layer of a specified material on a substrate without exposing the substrate surface to a high-energy etching plasma. The substrate is prepared for etching by depositing a thin film of a second material distinct from the specified material on the substrate surface. The designated layer of specified material is formed on top of the thin film. Etching of the designated layer in a plasma etching chamber then proceeds while a preferably high level of power is applied to the plasma etching chamber. The dual mode etching system generates an endpoint signal resulting in termination of the high-power etch when the plasma etching chamber begins etching the thin film of second material. Portions of the thin film remaining on the substrate are then removed using a process less damaging to the substrate than etching at high power.

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First Claim