Plasma treatment method and apparatus
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United States of America Patent
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Sep 7, 1993
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N/A
app pub date -
Mar 27, 1992
filing date -
Apr 4, 1991
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Abstract
A plasma treatment method and apparatus utilize various gas inlet and outlet structure arrangements to optimize treatment characteristics for a semiconductor wafer. A buffer zone is created between gas inlets and the discharge zone of the vacuum treatment chamber to enhance uniformity of gas flow. The evacuation arrangement enables reactant gas to be exhausted uniformly to reduce gas residence time below a threshold while maintaining optimum flow rates and etch uniformity at low effective exhaust speeds.
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