Ultrasonic energy enhanced chemi-mechanical polishing of silicon wafers
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United States of America Patent
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Sep 21, 1993
Grant Date -
N/A
app pub date -
Feb 14, 1992
filing date -
Feb 14, 1992
priority date (Note) -
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Abstract
A technique for chemi-mechanical polishing of semiconductor wafers using ultrasonic energy is disclosed. A transducer is mounted in the polishing system, either to a platen to which the polishing pad is mounted, or to a carrier to which the semiconductor wafer is mounted. In either case, relative vibratory motion is established between the wafer and the polishing pad. The transducer may also be mounted within the reservoir containing the platen, carrier and polishing slurry, to agitate the slurry itself. By vibrating the polishing pad relative to the wafer, polish rate and repeatability are enhanced, the polishing process is less sensitive to pad use history, and the pad is somewhat self-conditioning.
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