Multijunction photovoltaic device and fabrication method
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United States of America Patent
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Sep 21, 1993
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N/A
app pub date -
Jul 16, 1991
filing date -
Jul 16, 1991
priority date (Note) -
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Abstract
A multijunction photovoltaic device includes first and second amorphous silicon PIN photovoltaic cells in a stacked arrangement. An interface layer, composed of a doped silicon compound, is disposed between the two cells and has a lower bandgap than the respective n- and p-type adjacent layers of the first and second cells. The interface layer forms an ohmic contact with the one or the adjacent cell layers of the same conductivity type, and a tunnel junction with the other of the adjacent cell layers. The disclosed device is fabricated by a glow discharge process.
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