Semiconductor device incorporating internal voltage down converting circuit
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United States of America Patent
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-
Sep 28, 1993
Grant Date -
N/A
app pub date -
Jan 10, 1992
filing date -
Jun 20, 1991
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
An n channel driver circuit comprised of an N channel MOS transistor is provided in parallel to a driver circuit comprised of a P channel MOS transistor. Normally, n channel driver circuit supplies an internal supply voltage, to activate driver circuit only at the time of current peak. Thus, an insufficient capability of n.sup.- channel driver circuit to supply current is supplemented.
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