Importance

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Abstract

A plasma treating apparatus includes an electrostatic chuck constructing an electrically conductive layer and insulating layers having the conductive layer sandwiched therebetween. A RF current supplied to a susceptor is prevented from flowing into the conductive layer of the chuck so as to suppress the RF current leakage from a cable connected to the conductive layer of the chuck for high voltage application. The plasma treating apparatus includes a chamber having a first electrode, a second electrode disposed within the chamber, a cylindrical high frequency power supply member inserted from the outside into the chamber such that the tip of the member is connected to the second electrode, high frequency power supply means for supplying a high frequency power through the power supply member to the second electrode so as to generate a plasma in the region between the first and second electrodes within the chamber, an electrostatic chuck arranged on the second electrode and constructed such that a conductive layer is formed within an insulating layer, a cable for applying a high voltage, the cable being inserted into the power supply member and having the tip connected to the conductive layer of the electrostatic chuck, and a power source connected to the cable.

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First Claim