Method of growing thin film
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United States of America Patent
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Oct 5, 1993
Grant Date -
N/A
app pub date -
Mar 6, 1991
filing date -
Mar 6, 1990
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A heating process for producing a high quality diamond or c-BN film on a diamond or c-BN substrate comprising placing a diamond or c-BN substrate in vacuum, elevating the temperature and treating its surface with a chlorine containing gas, a fluorine containing gas, a nitrogen containing plasma or a hydrogen containing plasma. The treatment gas is then removed and feed gases are introduced which are suitable for growing a thin diamond or c-BN film on the surface substrate under chemical vapor deposition conditions.
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