Rotating sputtering apparatus for selected erosion

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United States of America Patent

PATENT NO 5252194
SERIAL NO

07919074

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A magnetron sputter source providing a predetermined erosion distribution over the surface of a sputter target material is described. When the distribution is uniform, close coupling of the sputter target with the substrate to be coated is achieved, resulting in improved collection efficiency of the sputtered material by the wafer and improved film thickness uniformity. Elimination of erosion grooves provide for greater target consumption and longer target life. The cathode magnetron sputter source includes a rotating magnet assembly of a specific shape and a specific magnetic strength provides the desired erosion distribution. The target may be dished to improve uniformity near the periphery of the wafer. The resulting magnetron cathode is used for the deposition of thin films. Further applications of uniform magnetron erosion or preselected erosion include uniform or preselected magnetron sputter etch or reactive ion etch and concurrent deposition and etch.

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Patent Owner(s)

Patent OwnerAddress
NOVELLUS SYSTEMS INC3970 NORTH FIRST STREET SAN JOSE CA 95134

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Anderson, Robert L Palo Alto, CA 60 2730
Cochran, Ronald R Mountain View, CA 6 249
Demaray, Richard E Oakland, CA 36 1822
Helmer, John C Menlo Park, CA 15 703
Hoffman, Jr Vance E Los Altos, CA 3 146
Park, Young H San Ramon, CA 8 252

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