Method of fabricating integrated resistors in high density substrates

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United States of America Patent

PATENT NO 5254493
SERIAL NO

07841311

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Abstract

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A process for fabricating integrated resistors in high density interconnect substrates for multi-chip modules. In addition, the resistor material can be converted selectively into an insulator for optionally allowing for the simultaneous fabrication of integrated resistors and capacitors in relatively few steps. The process is well suited for copper/polyimide substrates.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG ELECTRONICS CO LTDGYEONGGI DO KOREA SUWON SUWON GYEONGGI-DO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kumar, Nalin Austin, TX 106 2376

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