Semi-insulating InP single crystals, semiconductor devices having substrates of the crystals and processes for producing the same
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United States of America Patent
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Oct 19, 1993
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N/A
app pub date -
Sep 11, 1992
filing date -
Mar 2, 1990
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Abstract
A semi-insulating InP single crystal, semiconductor device with a substrate of crystal and processes of producing the same are disclosed. Crystal is derived from an undoped InP single crystal intermediate. The intermediate has a concentration of all native Fe, Co and Cr of 0.05 ppmw. The crystal has a resistivity of 1.times.10.sup.6 .OMEGA..multidot.cm or more and a mobility of above 3,000 cm.sup.2 /V.multidot.s both at 300K. A process of producing the crystal includes a step of heat-treating the intermediate under 6 kg/cm.sup.2 of phosphorus vapor pressure. The produced semiconductor device is a MIS device operating in essentially the same high-speed manner as a HEMT.
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