Plasma processing method and apparatus

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United States of America Patent

PATENT NO 5256483
SERIAL NO

07606185

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Abstract

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A plasma process and an apparatus therefor are described. A number of substrates are disposed between a pair of electrodes, to which a high frequency electric power is applied in order to generate glow discharge and induce a plasma. The substrates in the plasma are applied with an alternating electric field. By virtue of the alternating electric field, the substrates are subjected to sputtering action.

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Patent Owner(s)

Patent OwnerAddress
SEMICONDUCTOR ENERGY LABORATORY CO LTDJAPAN'S KANAGAWA PREFECTURE ATSUGI CITY ATSUGI-SHI KANAGAWA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hamatani, Toshiji Atsugi, JP 132 5391
Imatou, Shinji Atsugi, JP 11 243
Inushima, Takashi Atsugi, JP 40 1022
Itou, Kenji Zama, JP 28 272
Kawano, Atsushi Atsugi, JP 61 518
Nakashita, Kazuhisa Atsugi, JP 10 329
Tsuchiya, Mitsunori Atsugi, JP 12 226
Yamazaki, Shunpei Atsugi, JP 7534 239327

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