Photovoltaic device including a boron doping profile in an i-type layer
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United States of America Patent
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Oct 26, 1993
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N/A
app pub date -
Jul 19, 1991
filing date -
Jul 19, 1991
priority date (Note) -
Expired
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Abstract
A photovoltaic cell for use in a single junction or multijunction photovoltaic device, which includes a p-type layer of a semiconductor compound including silicon, an i-type layer of an amorphous semiconductor compound including silicon, and an n-type layer of a semiconductor compound including silicon formed on the i-type layer. The i-type layer including an undoped first sublayer formed on the p-type layer, and a boron-doped second sublayer formed on the first sublayer.
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