Composite dielectric for a semiconductor device and method of fabrication
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United States of America Patent
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Nov 2, 1993
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N/A
app pub date -
Aug 18, 1992
filing date -
Aug 18, 1992
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Abstract
A high-quality, highly reliable, composite dielectric layer for a semiconductor device. The composite dielectric layer is formed by nitriding a silicon surface, forming an oxide layer on the nitrided silicon surface, and then annealing the nitrided-silicon surface and the oxide in an oxygen ambient.
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