Narrow radius tips for high voltage semiconductor devices with interdigitated source and drain electrodes
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United States of America Patent
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Nov 2, 1993
Grant Date -
N/A
app pub date -
Dec 12, 1991
filing date -
Dec 12, 1991
priority date (Note) -
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Abstract
A field effect transistor (FET), according to the present invention, comprises a source and drain pair of electrodes having non-uniform charge distributions between them, such as results from small radius tips, and has a gate and channel structure that exists only between points of the source and drain pair that have the less intense charge distributions, e.g., areas not involving any small radius tips. The gate and channel structure is such that, given the non-uniform charge distributions between the source and drain pair of electrodes, the electric field is reduced around the tip by eliminating the n-well junction near the source-drain fingertips.
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