Nonvolatile memory with enhanced carrier generation and method for programming the same
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United States of America Patent
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-
Nov 2, 1993
Grant Date -
N/A
app pub date -
Dec 3, 1990
filing date -
Dec 3, 1990
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
Programming speed of a nonvolatile memory is improved by enhancing carrier generation. In one form, a nonvolatile memory has a control gate which overlies a channel region in a substrate. A floating gate overlies a portion of the channel region and is positioned between the substrate and the control gate. A source and a drain are formed in the substrate, being displaced by the channel region. A first programming voltage is applied to the drain to create an electric field at a junction between the drain and channel region. Current is forced into the source and through the substrate in order to enhance carrier generation at the junction between the drain and channel region, thereby increasing an electric field at the junction. A second programming voltage, having a ramp shaped leading edge, is applied to the control gate to increase the electrical field and to program the memory to a predetermined logic state.
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