In situ method for forming a capacitive PCB
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United States of America Patent
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Nov 16, 1993
Grant Date -
N/A
app pub date -
Apr 6, 1992
filing date -
Apr 6, 1992
priority date (Note) -
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status (Latency Note)
Importance
Abstract
An in situ method for forming a bypass capacitor element internally within a PCB comprising the steps of arranging one or more uncured dielectric sheets with conductive foils on opposite sides thereof and laminating the conductive foils to the dielectric sheet simultaneously as the PCB is formed by a final lamination step, the conductive foils preferably being laminated to another layer of the PCB prior to their arrangement adjacent the dielectric sheet or sheets, the dielectric foils even more preferably being initially laminated to additional dielectric sheets in order to form multiple bypass capacitive elements as a compound subassembly within the PCB.
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