Semiconductor wafer cleaning using condensed-phase processing
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United States of America Patent
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Nov 16, 1993
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app pub date -
Aug 28, 1992
filing date -
Aug 28, 1992
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Abstract
A method and system for semiconductor wafer cleaning within a condensed-phase processing environment (54) is based on first cooling the semiconductor wafer (52) to a predetermined temperature in order to condense a liquid film (156) on the semiconductor wafer surface from a condensable process gas or gas mixture. Then, the method and system promote thermally activated surface reactions and rapidly evaporate liquid film (156) from the semiconductor wafer surface using a high peak power, short pulse duration energy source such as a pulsed microwave source to dissolve surface contaminants and produce drag forces sufficiently large to remove particulates (154) and other surface contaminants from the surface of the semiconductor wafer. The method and system of this invention can remove various organic, metallic, native oxide, and particulate contaminants from semiconductor wafer surface.
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