Thin film capacitor

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 5262920
SERIAL NO

07882000

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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In a thin film capacitor in which a lower electrode,a dielectric film and an upper electrode are formed in order on a substrate, both the lower and upper electrodes are respectively formed with a first conductive layer made of Ti, Ta, Mo and W and a second conductive layer made of Pt, Pd, Rh and Al in this order from the substrate. In addition, a conductive metal oxide film such as made of PdO and others is formed, as required, at least between the lower electrode and the dielectric film or between the upper electrode and the dielectric film.

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First Claim

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Patent Owner(s)

Patent OwnerAddressTotal Patents
NEC CORPORATIONTOKYO10615

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Matsubara, Shogo Tokyo, JP 24 499
Sakuma, Toshiyuki Tokyo, JP 35 344
Yamamichi, Shintaro Tokyo, JP 89 1088

Cited Art Landscape

Patent Info (Count) # Cites Year
 
INTERNATIONAL BUSINESS MACHINES CORPORATION (1)
* 4437139 Laser annealed dielectric for dual dielectric capacitor 73 1982
 
North American Philips Corporation (1)
* 4631633 Thin film capacitors and method of making the same 14 1985
 
RAMTRON INTERNATIONAL CORPORATION (1)
* 5005102 Multilayer electrodes for integrated circuit capacitors 145 1989
 
U.S. PHILIPS CORPORATION (1)
* 5122477 Method of manufacturing a semiconductor device comprising capacitors which form memory elements and comprise a ferroelectric dielectric material having multilayer lower and upper electrodes 69 1991
 
Allied-Signal Inc. (1)
* 4733328 Process for manufacturing capacitive devices and capacitive devices manufactured by the process 74 1986
* Cited By Examiner

Patent Citation Ranking

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Patent Info (Count) # Cites Year
 
Other [Check patent profile for assignment information] (1)
* 5550705 Electrical terminal connection employing plural materials 14 1995
 
OMRON CORPORATION (1)
* 5796572 Thin film capacitor and hybrid circuit board and methods of producing same 11 1996
 
LG INNOTEK CO., LTD. (1)
8633508 Semiconductor element and a production method therefor 0 2009
 
NORTH CAROLINA STATE UNIVERSITY (1)
* 5555486 Hybrid metal/metal oxide electrodes for ferroelectric capacitors 145 1994
 
MICRON TECHNOLOGY, INC. (3)
* 7560815 Device structures including ruthenium silicide diffusion barrier layers 48 2000
* 8461682 Ruthenium silicide diffusion barrier layers and methods of forming same 0 2009
* 2009/0278,232 RUTHENIUM SILICIDE DIFFUSION BARRIER LAYERS AND METHODS OF FORMING SAME 1 2009
 
CALIPER TECHNOLOGIES CORP. (1)
* 6582576 Controller/detector interfaces for microfluidic systems 14 1999
 
Kojima Press Industry Co., Ltd. (2)
* 8228661 Film capacitor and method of producing the same 1 2010
* 2011/0032,656 FILM CAPACITOR AND METHOD OF PRODUCING THE SAME 1 2010
 
CHEMTRON RESEARCH LLC (2)
* 8088658 Thin film capacitor and method of fabrication thereof 0 2009
8399304 Thin film capacitor and method of fabrication thereof 0 2011
 
SAMSUNG ELECTRONICS CO., LTD. (4)
* 5751540 Ferroelectric capacitor with rhodium electrodes 21 1996
* 6570253 Multi-layer film for a thin film structure and a capacitor using the same 13 2000
7052918 Multi-layer film for thin film structure, capacitor using the same and fabrication method thereof 1 2003
* 2003/0207,529 Multi-layer film for thin film structure, capacitor using the same and fabrication method thereof 1 2003
 
LG Semicon Co., Ltd. (1)
* 5668040 Method for forming a semiconductor device electrode which also serves as a diffusion barrier 42 1996
 
INTELLECTUAL VENTURES I LLC (2)
* 7082026 On chip capacitor 0 2001
7015563 On chip capacitor 2 2004
 
ENTEGRIS, INC. (1)
* 6284654 Chemical vapor deposition process for fabrication of hybrid electrodes 41 1998
 
Electronic Concepts, Inc. (2)
* 5608600 Metallized film capacitor with increased dielectric breakdown voltage 7 1993
* 6111743 Metallized capacitor having increased dielectric breakdown voltage and method for making the same 13 1999
 
CONVERSANT INTELLECTUAL PROPERTY MANAGEMENT INC. (1)
* 5714402 Method for fabricating a capacitor of a semiconductor device and the structure of the same 17 1996
 
GENERAL ELECTRIC COMPANY (1)
* 2011/0097,589 ARTICLE FOR HIGH TEMPERATURE SERVICE 1 2009
 
POLARIS INNOVATIONS LIMITED (2)
* 8344438 Electrode of an integrated circuit 2 2008
* 2009/0194,410 Electrode of an Integrated Circuit 1 2008
 
FUJITSU LIMITED (2)
* 7778009 Thin-film capacitor and method of manufacturing the same 2 2007
* 2007/0176,175 Thin-film capacitor and method of manufacturing the same 7 2007
 
MURATA MANUFACTURING CO., LTD. (1)
* 6373684 Ceramic electronic component having lead terminal 2 2001
 
MOTOROLA, INC. (1)
* 5933316 Method for forming a titanate thin film on silicon, and device formed thereby 21 1993
 
UNIVERSITY OF MARYLAND, BALTIMORE (1)
* 5798903 Electrode structure for ferroelectric capacitor integrated on silicon 88 1995
 
Ultrasource, Inc. (11)
6761963 Integrated thin film capacitor/inductor/interconnect system and method 21 2001
6998696 Integrated thin film capacitor/inductor/interconnect system and method 8 2003
6890629 Integrated thin film capacitor/inductor/interconnect system and method 10 2003
* 2004/0081,811 Integrated thin film capacitor/inductor/interconnect system and method 15 2003
* 2004/0080,021 Integrated thin film capacitor/inductor/interconnect system and method 15 2003
7327582 Integrated thin film capacitor/inductor/interconnect system and method 6 2005
* 2005/0175,938 Integrated thin film capacitor/inductor/interconnect system and method 3 2005
7425877 Lange coupler system and method 1 2005
* 2005/0162,236 Lange coupler system and method 2 2005
7446388 Integrated thin film capacitor/inductor/interconnect system and method 6 2005
* 2006/0097,344 Integrated thin film capacitor/inductor/interconnect system and method 0 2005
 
INTEL CORPORATION (2)
* 7709873 Polymer memory with adhesion layer containing an immobilized metal 0 2005
* 2006/0220,080 Polymer memory and method of its fabrication 4 2005
 
Quality Microcircuits Corporation (1)
* 5508881 Capacitors and interconnect lines for use with integrated circuits 51 1994
 
LAWRENCE LIVERMORE NATIONAL SECURITY, LLC (1)
* 5742471 Nanostructure multilayer dielectric materials for capacitors and insulators 159 1996
 
ROHM CO., LTD. (3)
* 7057874 Ferroelectric capacitor 0 2004
7443649 Ferroelectric capacitor 0 2006
* 2006/0170,021 FERROELECTRIC CAPACITOR 1 2006
 
TEXAS INSTRUMENTS INCORPORATED (8)
* 5566045 High-dielectric-constant material electrodes comprising thin platinum layers 98 1994
6204069 Lightly donor doped electrodes for high-dielectric-constant materials 17 1994
6319542 Lightly donor doped electrodes for high-dielectric-constant materials 17 1995
6593638 Lightly donor doped electrodes for high-dielectric-constant materials 6 1995
* 5781404 Electrode interface for high-dielectric-constant materials 16 1995
* 5581436 High-dielectric-constant material electrodes comprising thin platinum layers 90 1995
* 5793600 Method for forming high dielectric capacitor electrode structure and semiconductor memory devices 15 1995
* 6462931 High-dielectric constant capacitor and memory 29 1997
 
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (1)
* 5645976 Capacitor apparatus and method of manufacture of same 16 1994
* Cited By Examiner