Superconducting detector and method of making same
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United States of America Patent
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Nov 23, 1993
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N/A
app pub date -
Apr 15, 1992
filing date -
Apr 15, 1992
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Abstract
A detector useful for detecting infrared (IR) radiation is described which is formed of an epitaxial film of superconductive material having a high transition temperature Tc. Specifically, an oxide of yttrium barium and copper is preferred for the high Tc material. The sensor is formed on a single crystalline silicon body suspended by a silicon nitride membrane over a gap formed in a silicon base body and thermally isolated thereby.
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