System and method for selectively laser processing a target structure of one or more materials of a multimaterial, multilayer device
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United States of America Patent
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Nov 23, 1993
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app pub date -
Sep 10, 1992
filing date -
Sep 10, 1992
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Abstract
A laser system and processing method exploits the absorption contrast between the materials from which a link (12) and an underlying substrate (22) are made to effectively remove the link from the substrate. Laser output in a wavelength range of 1.2 to 2.0 .mu.m (30) optimizes the absorption contrast between many high conductivity materials (e.g., metals) and silicon substrates and permits the use of laser output in a wider range of energy or power levels, pulse widths, without risking damage to the silicon substrates or adjacent circuit structures. Existing link processing laser systems can be readily modified to operate in the 1.2 to 3.0 .mu.m range.
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