Diamond and its preparation by chemical vapor deposition method
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United States of America Patent
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Dec 14, 1993
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N/A
app pub date -
May 18, 1992
filing date -
Feb 1, 1988
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Abstract
A diamond having improved properties is produced by a method which comprises introducing a mixture of hydrogen (A), an inert gas (B) and a carbon-containing compound (C) in molar ratios which satisfy the following equations: ##EQU1## generating a low temperature plasma with one of direct current and an alternating current electromagnetic field under pressure of 5 to 760 Torr to form the diamond on a substrate, wherein there is no substantial differnce between a place where the plasma is generated and a place where the diamond is formed on the substrate.
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