Microwave plasma CVD method for coating a substrate with high thermal-conductivity diamond material
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United States of America Patent
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Dec 21, 1993
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Sep 30, 1992
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Mar 30, 1987
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Abstract
A two-stage microwave plasma CVD process is disclosed for making a CVD diamond material, substantially free of voids, which has an average crystallite size greater than about 15 microns, a maximum intensity of the diamond Raman peak in counts/sec divided by the intensity of photoluminescence at 1270 cm.sup.-1 greater than about 3, a Raman sp.sup.3 full width half maximum less than about 6 cm.sup.-1 and a diamond-to-graphite Raman ratio greater than about 25.
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