Importance

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Abstract

A thin-film ROM device includes an array of open circuit and closed-circuit cells (5 to 8) formed from a stack of thin films (12,21,22,23,11) on a glass or other substrate (10). The semiconductor films (21,22,23) may be of hydrogenated amorphous silicon. At least one of the semiconductor films (21,22,23) is removed from some of the closed-circuit cell areas (5,7,8) before depositing the next film. In this way, at least a second type of thin-film diode (MIM, MIN, MIP) is formed having a different conduction characteristic to that of a first type (NIP), so increasing the information content of the ROM array. A lower semiconductor film (23) can be readily etched away from the lower electrode film (11) by a selective etching treatment in which the electrode film (11) acts as an etch stop. By monitoring emissions during plasma etching, an upper semiconductor film (21 or 22) can be removed from a lower semiconductor film (22 or 23). PN diodes and back-to-back PNP or NPN or PINIP or NIPIN diodes may be formed for some of the closed-circuit cells.

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First Claim