Importance

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Abstract

The invention is an output driver circuit of a dynamic random access memory (DRAM) wherein the output driver is wired in a push-pull configuration. The push-pull configuration comprises a pull-up portion and a pull-down portion serially connected at an output node. The pull-up portion comprises a an n-channel metal oxide semiconductor (NMOS) transistor having a gate potential determined by a programmable circuit. In the preferred embodiment the programmable circuit provides a potential to the gate node of the NMOS that is directly proportional to the supply potential until a maximum programmed gate potential is reached. The programmable circuit maintains the maximum programmed gate potential for further increases in the supply potential. The pull-down portion comprises a pull-down NMOS transistor interposed between the output node and ground. The pull-down NMOS transistor is controlled by a pull-down signal on the gate node. When actuated the pull-down transistor provides a low logic level at the output node. The invention is also the method of driving a potential to the output node.

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First Claim