Structure for fabrication of a CCD image sensor
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United States of America Patent
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Jan 4, 1994
Issued Date -
N/A
app pub date -
Jan 29, 1993
filing date -
May 11, 1990
priority date (Note) -
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Abstract
The present invention relates to a structure and a method for fabrication of a CCD image sensor having a structure that a p-type epitaxial layer is formed on an n-type substrate to reduce a smear noise and an n-type region for controlling an OFD voltage which is disposed between an n-type substrate beneath an n-type photo diode and a p-type epitaxial layer and a p.sup.+ -type region for reducing the smear phenomenon which is deposed between an n-type substrate beneath an n-type BCCD and a p-type epitaxial layer. According to this improved structure and method, it can be fabricated of a CCD image sensor easily and rapidly and with reduced smear noise.
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