Semiconductor memory device with improved buffer for generating internal write designating signal and operating method thereof

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United States of America Patent

PATENT NO 5278789
SERIAL NO

07801807

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Abstract

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A write enable buffer circuit for generating an internal write designating signal includes a gate circuit for inhibiting generation of the signal in response to an internal output designating signal which attains a settled state prior to a data outputting operation by a data outputting buffer. In data reading, the gate circuit forbids generation of an internal write designating signal to certainly hold the internal write designating signal in a disable state even if a noise is generated in data output. Thus, it is prevented that an internal write designating signal is erroneously generated due to noise in data output to bring data output buffer into an output high impedance state, and also the data input buffer is certainly maintained at an inactive state in data output.

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Patent Owner(s)

  • MITSUBISHI DENKI KABUSHIKI KAISHA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Dosaka, Katsumi Hyogo, JP 130 4806
Inoue, Kazunari Hyogo, JP 33 851

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