Temperature-dependent DRAM refresh circuit
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United States of America Patent
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Jan 11, 1994
Grant Date -
N/A
app pub date -
Apr 12, 1991
filing date -
Apr 12, 1991
priority date (Note) -
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Importance
Abstract
A temperature sensing circuit allows a DRAM array to use less power than would normally be possible due to the reduced refresh rate based on the temperature of the DRAM array. The temperature circuit removes the refresh guardbanding on the DRAMS. Instead of refreshing a 1 megabyte DRAM every 8 ms, refreshing the DRAMs every 128 ms is possible, depending on the temperature of the DRAM array.
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