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Abstract

A process of fabricating an asymmetrical LDD-MOSFET of the type in which a diffused low-doped layer is provided only on the drain side is disclosed. In a MOSFET-formed region, after forming a gate electrode, using a photoresist film covering one sidewall of the gate electrode and the vicinity thereof, ion implantation is performed to form a diffused lightly-doped layer and thereover a silicon dioxide film is selectively grown by the liquid phase deposition technique. In detail, immersion of a concerned wafer in a silicon dioxide-saturated hydrofluosilicic acid aqueous solution while adding boric acid to it brings about the separation and deposition of silicon dioxide film. No deposition onto the surface of the photoresist film takes place. In usual way proceeds formation of a spacer by anisotropic etching, followed by heavily doped source and drain regions. A reduced source parasitic resistance LDD-MOSFET can be easily fabricated.

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