Plasma etching apparatus
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United States of America Patent
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Mar 1, 1994
Grant Date -
N/A
app pub date -
Nov 27, 1991
filing date -
Nov 28, 1990
priority date (Note) -
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status (Latency Note)
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Abstract
A plasma etching apparatus comprising a susceptor for holding a semiconductive wafer, a cooling jacket having a coolant of a large cooling capacity and capable of quickly cooling said susceptor to an intended low temperature, a process chamber enclosing the susceptor and the cooling jacket, a gas discharging mechanism for evacuating the process chamber, an insulating member interposed between the susceptor and the cooling jacket, a gas supply device for supplying gas to an O-ring holding groove arranged on the interface regions of the susceptor, the insulating member and the cooling section and a pressure control mechanism for controlling the pressure of the supplied gas.
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