Sensing amplifier circuit for data readout from a semiconductor memory device
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United States of America Patent
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Mar 1, 1994
Grant Date -
N/A
app pub date -
Jan 29, 1992
filing date -
Feb 13, 1991
priority date (Note) -
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Abstract
In a semiconductor memory device, two sense amplifiers are provided on one output signal line for reading data stored in a memory cell. The sense amplifiers are connected in parallel to each other. A control signal generation circuit generates a control signal so that one of the sense amplifiers which has a greater drive capability is activated during a predetermined time period after an address from which data are to be read out is changed, and that the sense amplifier having a smaller drive capability is activated during a time period other than the predetermined time period.
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